%0 Journal Article
%T Non-linear modeling, analysis, design and simulation of a solid state power amplifier based on GaN technology for Ku band microwave application
%J AUT Journal of Modeling and Simulation
%I Amirkabir University of Technology
%Z 2588-2953
%A Ezzati, V.
%A Abdipour, A.
%D 2018
%\ 12/01/2018
%V 50
%N 2
%P 195-202
%! Non-linear modeling, analysis, design and simulation of a solid state power amplifier based on GaN technology for Ku band microwave application
%K Non-linear GaN modeling
%K power amplifier
%K Ku band
%K harmonic balance
%R 10.22060/miscj.2018.13414.5072
%X In this paper, a non-linear approach for design and analysis of solid-state power amplifiers is presented and used for AlGaN-GaN high electron-mobility transistor (HEMTs) on SiC substrate for Ku band(12.4 - 13.6 GHz) applications. With combining the output power of 8 transistors, maximum output power of 46.3 dBm (42.6 W), PAE of 43% and linear gain of 22.9 dB were achieved and good agreement has been obtained between the simulation and analysis results.
%U https://miscj.aut.ac.ir/article_2948_2f817b0936417e8cc4d489abf69e7286.pdf